1. product profile 1.1 general description logic level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology. this product is designed and qualified for use in computing, communications, consumer and industrial applications. 1.2 features and benefits ? logic-level compatible ? very fast switching ? trench mosfet technology 1.3 applications ? battery management ? high-speed switching 1.4 quick reference data 2. pinning information PMV45EN n-channel trenchmos logic level fet rev. 2 ? 7 november 2011 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 150c --30v i d drain current t sp =25c; v gs =10v; see figure 1 ; see figure 3 --5.4a v gs gate-source voltage -20 - 20 v static characteristics r dson drain-source on-state resistance v gs =10v; i d =2a; t j =25c; see figure 9 ; see figure 10 - 3542m ? table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate sot23 (to-236ab) 2ssource 3 d drain 12 3 s d g mbb076 product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
PMV45EN n-channel trenchmos logic level fet 3. ordering information 4. marking [1] % = placeholder for manufacturing site code 5. limiting values table 3. ordering information type number package name description version PMV45EN to-236ab plastic surface-mounted package; 3 leads sot23 table 4. marking codes type number marking code [1] PMV45EN %4n table 5. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t j 25 c; t j 150 c - 30 v v dgr drain-gate voltage t j 25 c; t j 150 c; r gs =20k ? -30v v gs gate-source voltage -20 20 v i d drain current t sp = 100 c; v gs =10v; see figure 1 -3.4a t sp =25c; v gs =10v; see figure 1 ; see figure 3 -5.4a i dm peak drain current t sp = 25 c; pulsed; t p 10 s; see figure 3 - 21.6 a p tot total power dissipation t sp =25c; see figure 2 -2w t stg storage temperature -55 150 c t j junction temperature -55 150 c source-drain diode i s source current t sp =25c - 1.7 a i sm peak source current t sp = 25 c; pulsed; t p 10 s - 6.9 a product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
PMV45EN n-channel trenchmos logic level fet 6. characteristics table 6. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =250a; v gs =0v; t j =25c 30--v i d =250a; v gs =0v; t j = -55 c 27 - - v v gs(th) gate-source threshold voltage i d =1ma; v ds =v gs ; t j =25c; see figure 8 11.52v i d =1ma; v ds =v gs ; t j = 150 c; see figure 8 0.6--v i d =1ma; v ds =v gs ; t j =-55c; see figure 8 --2.2v i dss drain leakage current v ds =30v; v gs =0v; t j =25c --1a v ds =30v; v gs =0v; t j = 150 c - - 100 a i gss gate leakage current v gs =20v; v ds =0v; t j = 25 c - 10 100 na v gs =-20v; v ds =0v; t j = 25 c - 10 100 na r dson drain-source on-state resistance v gs =10v; i d =2a; t j =25c; see figure 9 ; see figure 10 - 3542m ? v gs =10v; i d =2a; t j = 150 c; see figure 9 ; see figure 10 - 59.5 71.4 m ? v gs =4.5v; i d = 1.5 a; t j = 25 c; see figure 9 ; see figure 10 - 4554m ? dynamic characteristics q g(tot) total gate charge i d =3a; v ds =15v; v gs =10v; t j =25c; see figure 11 -9.4-nc q gs gate-source charge - 1.2 - nc q gd gate-drain charge - 1.9 - nc c iss input capacitance v ds =30v; v gs = 0 v; f = 1 mhz; t j =25c - 350 - pf c oss output capacitance - 70 - pf c rss reverse transfer capacitance -50-pf t d(on) turn-on delay time v ds =15v; r l =15 ? ; v gs =10v; r g(ext) =6 ? ; t j =25c -5-ns t r rise time - 7 - ns t d(off) turn-off delay time - 16 - ns t f fall time - 5.5 - ns source-drain diode v sd source-drain voltage i s = 1.5 a; v gs =0v; t j =25c; see figure 12 - 0.79 1.2 v product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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